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	Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment
	Li Pei; Guo Hong-Xia; Guo Qi; Zhang Jin-Xin; Xiao Yao; Wei Ying; Cui Jiang-Wei; Wen Lin; Liu Mo-Han; Wang Xin
刊名	CHINESE PHYSICS B
	2015
卷号	24期号:[db:dc_citation_issue]
关键词	laser microbeam experiment SiGe heterojunction bipolar transistor single event effect three-dimensional numerical simulation
ISSN号	1674-1056
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3263029
专题	西安交通大学
推荐引用方式 GB/T 7714	Li Pei,Guo Hong-Xia,Guo Qi,et al. Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment[J]. CHINESE PHYSICS B,2015,24([db:dc_citation_issue]).
APA	Li Pei.,Guo Hong-Xia.,Guo Qi.,Zhang Jin-Xin.,Xiao Yao.,...&Wang Xin.(2015).Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment.CHINESE PHYSICS B,24([db:dc_citation_issue]).
MLA	Li Pei,et al."Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment".CHINESE PHYSICS B 24.[db:dc_citation_issue](2015).

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