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Endurance properties of silicon-doped hafnium oxide ferroelectric and antiferroelectric-like thin films: A comparative study and prediction
Liu, Xiaohua; Zhou, Dayu; Guan, Yan; Li, Shuaidong; Cao, Fei; Dong, Xianlin
刊名ACTA MATERIALIA
2018
卷号154页码:190-198
关键词Hafnium oxide Ferroelectric Antiferroelectric Endurance Phase transition
ISSN号1359-6454
URL标识查看原文
WOS记录号[DB:DC_IDENTIFIER_WOSID]
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/3261177
专题大连理工大学
作者单位1.Dalian Univ Technol, Sch Mat Sci & Engn, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China.
2.Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China.
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Liu, Xiaohua,Zhou, Dayu,Guan, Yan,et al. Endurance properties of silicon-doped hafnium oxide ferroelectric and antiferroelectric-like thin films: A comparative study and prediction[J]. ACTA MATERIALIA,2018,154:190-198.
APA Liu, Xiaohua,Zhou, Dayu,Guan, Yan,Li, Shuaidong,Cao, Fei,&Dong, Xianlin.(2018).Endurance properties of silicon-doped hafnium oxide ferroelectric and antiferroelectric-like thin films: A comparative study and prediction.ACTA MATERIALIA,154,190-198.
MLA Liu, Xiaohua,et al."Endurance properties of silicon-doped hafnium oxide ferroelectric and antiferroelectric-like thin films: A comparative study and prediction".ACTA MATERIALIA 154(2018):190-198.
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