Endurance properties of silicon-doped hafnium oxide ferroelectric and antiferroelectric-like thin films: A comparative study and prediction | |
Liu, Xiaohua; Zhou, Dayu; Guan, Yan; Li, Shuaidong; Cao, Fei; Dong, Xianlin | |
刊名 | ACTA MATERIALIA
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2018 | |
卷号 | 154页码:190-198 |
关键词 | Hafnium oxide Ferroelectric Antiferroelectric Endurance Phase transition |
ISSN号 | 1359-6454 |
URL标识 | 查看原文 |
WOS记录号 | [DB:DC_IDENTIFIER_WOSID] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/3261177 |
专题 | 大连理工大学 |
作者单位 | 1.Dalian Univ Technol, Sch Mat Sci & Engn, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China. 2.Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China. |
推荐引用方式 GB/T 7714 | Liu, Xiaohua,Zhou, Dayu,Guan, Yan,et al. Endurance properties of silicon-doped hafnium oxide ferroelectric and antiferroelectric-like thin films: A comparative study and prediction[J]. ACTA MATERIALIA,2018,154:190-198. |
APA | Liu, Xiaohua,Zhou, Dayu,Guan, Yan,Li, Shuaidong,Cao, Fei,&Dong, Xianlin.(2018).Endurance properties of silicon-doped hafnium oxide ferroelectric and antiferroelectric-like thin films: A comparative study and prediction.ACTA MATERIALIA,154,190-198. |
MLA | Liu, Xiaohua,et al."Endurance properties of silicon-doped hafnium oxide ferroelectric and antiferroelectric-like thin films: A comparative study and prediction".ACTA MATERIALIA 154(2018):190-198. |
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