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	Elastic Properties of GaN Nanowires: Revealing the Influence of Planar Defects on Young's Modulus at Nanoscale
	Dai, Sheng; Zhao, Jiong; He, Mo-rigen; Wang, Xiaoguang; Wan, Jingchun; Shan, Zhiwei; Zhu, Jing
刊名	NANO LETTERS
	2015
卷号	15期号:[db:dc_citation_issue]页码:8-15
关键词	planar defects elastic behavior in situ electron microscopy Young's modulus GaN nanowires
ISSN号	1530-6984
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3259999
专题	西安交通大学
推荐引用方式 GB/T 7714	Dai, Sheng,Zhao, Jiong,He, Mo-rigen,et al. Elastic Properties of GaN Nanowires: Revealing the Influence of Planar Defects on Young's Modulus at Nanoscale[J]. NANO LETTERS,2015,15([db:dc_citation_issue]):8-15.
APA	Dai, Sheng.,Zhao, Jiong.,He, Mo-rigen.,Wang, Xiaoguang.,Wan, Jingchun.,...&Zhu, Jing.(2015).Elastic Properties of GaN Nanowires: Revealing the Influence of Planar Defects on Young's Modulus at Nanoscale.NANO LETTERS,15([db:dc_citation_issue]),8-15.
MLA	Dai, Sheng,et al."Elastic Properties of GaN Nanowires: Revealing the Influence of Planar Defects on Young's Modulus at Nanoscale".NANO LETTERS 15.[db:dc_citation_issue](2015):8-15.

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