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	Frequency Dispersion Analysis of Parasitic Parameters in Thin Dielectric MOS Capacitor
	Zhang, Xizhen; Zhang, Sujuan; Zhu, Huichao; Pan, Xiuyu; Cheng, Chuanhui; Li, Xiangping; Cheng, Yi; Chen, Baojiu
刊名	JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
	2018
卷号	18页码:7473-7478
关键词	Thin Dielectric MOS Capacitors Frequency Dispersion Five-Element Model Parasitic Parameters
ISSN号	1533-4880
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3258784
专题	大连理工大学
作者单位	1.Dalian Maritime Univ, Dept Phys, Dalian 116026, Peoples R China. 2.Yingkou City Agr Engn Sch, Yingkou 115009, Peoples R China. 3.Dalian Univ Technol, Dalian 116024, Peoples R China.
推荐引用方式 GB/T 7714	Zhang, Xizhen,Zhang, Sujuan,Zhu, Huichao,et al. Frequency Dispersion Analysis of Parasitic Parameters in Thin Dielectric MOS Capacitor[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2018,18:7473-7478.
APA	Zhang, Xizhen.,Zhang, Sujuan.,Zhu, Huichao.,Pan, Xiuyu.,Cheng, Chuanhui.,...&Chen, Baojiu.(2018).Frequency Dispersion Analysis of Parasitic Parameters in Thin Dielectric MOS Capacitor.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,18,7473-7478.
MLA	Zhang, Xizhen,et al."Frequency Dispersion Analysis of Parasitic Parameters in Thin Dielectric MOS Capacitor".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 18(2018):7473-7478.

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