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	Correlations of Photoluminescence and Size Evolution of Si Quantum Dots in Amorphous Silicon Carbide
	Chang Gengrong; Ma Fei; Fu Fuxing; Xu Kewei
刊名	RARE METAL MATERIALS AND ENGINEERING
	2015
卷号	44期号:[db:dc_citation_issue]页码:3023-3026
关键词	silicon carbide silicon quantum dot photoluminescence microstructure
ISSN号	1002-185X
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3246343
专题	西安交通大学
推荐引用方式 GB/T 7714	Chang Gengrong,Ma Fei,Fu Fuxing,et al. Correlations of Photoluminescence and Size Evolution of Si Quantum Dots in Amorphous Silicon Carbide[J]. RARE METAL MATERIALS AND ENGINEERING,2015,44([db:dc_citation_issue]):3023-3026.
APA	Chang Gengrong,Ma Fei,Fu Fuxing,&Xu Kewei.(2015).Correlations of Photoluminescence and Size Evolution of Si Quantum Dots in Amorphous Silicon Carbide.RARE METAL MATERIALS AND ENGINEERING,44([db:dc_citation_issue]),3023-3026.
MLA	Chang Gengrong,et al."Correlations of Photoluminescence and Size Evolution of Si Quantum Dots in Amorphous Silicon Carbide".RARE METAL MATERIALS AND ENGINEERING 44.[db:dc_citation_issue](2015):3023-3026.

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