Performance evaluation and Influence of Device Parameters on Threshold Voltage of Dual-material Strained Gate-all-around MOSFET | |
Zhang, Yefei; Li, Zunchao; Meng, Qingzhi; Guan, Yunhe; Luo, Dongxu | |
2015 | |
期号 | [db:dc_citation_issue] |
DOI | [db:dc_identifier_doi] |
会议录 | PROCEEDINGS OF 2015 IEEE 11TH INTERNATIONAL CONFERENCE ON ASIC (ASICON)
![]() |
URL标识 | 查看原文 |
ISSN号 | 2162-7541 |
WOS记录号 | [DB:DC_IDENTIFIER_WOSID] |
内容类型 | 会议论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/3232154 |
专题 | 西安交通大学 |
推荐引用方式 GB/T 7714 | Zhang, Yefei,Li, Zunchao,Meng, Qingzhi,et al. Performance evaluation and Influence of Device Parameters on Threshold Voltage of Dual-material Strained Gate-all-around MOSFET[C]. 见:. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论