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	An Analytical Switching Process Model of Low-Voltage eGaN HEMTs for Loss Calculation
	Wang, Kangping; Yang, Xu; Li, Hongchang; Ma, Huan; Zeng, Xiangjun; Chen, Wenjie
刊名	IEEE TRANSACTIONS ON POWER ELECTRONICS
	2016
卷号	31期号:[db:dc_citation_issue]页码:635-647
关键词	gallium nitride (GaN) current measurement Analytical model switching loss
ISSN号	0885-8993
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3231471
专题	西安交通大学
推荐引用方式 GB/T 7714	Wang, Kangping,Yang, Xu,Li, Hongchang,et al. An Analytical Switching Process Model of Low-Voltage eGaN HEMTs for Loss Calculation[J]. IEEE TRANSACTIONS ON POWER ELECTRONICS,2016,31([db:dc_citation_issue]):635-647.
APA	Wang, Kangping,Yang, Xu,Li, Hongchang,Ma, Huan,Zeng, Xiangjun,&Chen, Wenjie.(2016).An Analytical Switching Process Model of Low-Voltage eGaN HEMTs for Loss Calculation.IEEE TRANSACTIONS ON POWER ELECTRONICS,31([db:dc_citation_issue]),635-647.
MLA	Wang, Kangping,et al."An Analytical Switching Process Model of Low-Voltage eGaN HEMTs for Loss Calculation".IEEE TRANSACTIONS ON POWER ELECTRONICS 31.[db:dc_citation_issue](2016):635-647.

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