Conductive metallic filaments dominate in hybrid perovskite-based memory devices | |
Huang, Yang; Zhao, Zhenxuan; Wang, Chen; Fan, Hongbo; Yang, Yiming; Bian, Jiming; Wu, Huaqiang | |
刊名 | SCIENCE CHINA-MATERIALS |
2019 | |
卷号 | 62页码:1323-1331 |
关键词 | Ag filament perovskite memory analog switch threshold switch resistance mechanism |
ISSN号 | 2095-8226 |
URL标识 | 查看原文 |
WOS记录号 | [DB:DC_IDENTIFIER_WOSID] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/3229639 |
专题 | 大连理工大学 |
作者单位 | 1.Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China. 2.Dalian Univ Technol, Sch Phys, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China. 3.Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China. 4.Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China. 5.Dalian Univ Technol, Sch Phys, Minist Educ, Key Lab Mat Modificat Laser Ion & Electron Beams, Dalian 116024, Peoples R China. |
推荐引用方式 GB/T 7714 | Huang, Yang,Zhao, Zhenxuan,Wang, Chen,et al. Conductive metallic filaments dominate in hybrid perovskite-based memory devices[J]. SCIENCE CHINA-MATERIALS,2019,62:1323-1331. |
APA | Huang, Yang.,Zhao, Zhenxuan.,Wang, Chen.,Fan, Hongbo.,Yang, Yiming.,...&Wu, Huaqiang.(2019).Conductive metallic filaments dominate in hybrid perovskite-based memory devices.SCIENCE CHINA-MATERIALS,62,1323-1331. |
MLA | Huang, Yang,et al."Conductive metallic filaments dominate in hybrid perovskite-based memory devices".SCIENCE CHINA-MATERIALS 62(2019):1323-1331. |
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