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	GaAs-InGaAs-GaAs Fin-Array Tunnel Diodes on (001) Si Substrates With Room-Temperature Peak-to-Valley Current Ratio of 5.4
	Li, Qiang; Han, Yu; Lu, Xing; Lau, Kei May
刊名	IEEE ELECTRON DEVICE LETTERS
	2016
卷号	37期号:[db:dc_citation_issue]页码:24-27
关键词	tunnel diode peak-to-valley current ratio quantum-well fins Aspect ratio trapping
ISSN号	0741-3106
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3228120
专题	西安交通大学
推荐引用方式 GB/T 7714	Li, Qiang,Han, Yu,Lu, Xing,et al. GaAs-InGaAs-GaAs Fin-Array Tunnel Diodes on (001) Si Substrates With Room-Temperature Peak-to-Valley Current Ratio of 5.4[J]. IEEE ELECTRON DEVICE LETTERS,2016,37([db:dc_citation_issue]):24-27.
APA	Li, Qiang,Han, Yu,Lu, Xing,&Lau, Kei May.(2016).GaAs-InGaAs-GaAs Fin-Array Tunnel Diodes on (001) Si Substrates With Room-Temperature Peak-to-Valley Current Ratio of 5.4.IEEE ELECTRON DEVICE LETTERS,37([db:dc_citation_issue]),24-27.
MLA	Li, Qiang,et al."GaAs-InGaAs-GaAs Fin-Array Tunnel Diodes on (001) Si Substrates With Room-Temperature Peak-to-Valley Current Ratio of 5.4".IEEE ELECTRON DEVICE LETTERS 37.[db:dc_citation_issue](2016):24-27.

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