Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001) | |
Schlykow, V.; Klesse, W. M.; Niu, G.; Taoka, N.; Yamamoto, Y.; Skibitzki, O.; Barget, M. R.; Zaumseil, P.; von Kanel, H.; Schubert, M. A. | |
刊名 | APPLIED PHYSICS LETTERS
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2016 | |
卷号 | 109期号:[db:dc_citation_issue] |
ISSN号 | 0003-6951 |
DOI | [db:dc_identifier_doi] |
URL标识 | 查看原文 |
WOS记录号 | [DB:DC_IDENTIFIER_WOSID] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/3227761 |
专题 | 西安交通大学 |
推荐引用方式 GB/T 7714 | Schlykow, V.,Klesse, W. M.,Niu, G.,et al. Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)[J]. APPLIED PHYSICS LETTERS,2016,109([db:dc_citation_issue]). |
APA | Schlykow, V..,Klesse, W. M..,Niu, G..,Taoka, N..,Yamamoto, Y..,...&Schroeder, T..(2016).Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001).APPLIED PHYSICS LETTERS,109([db:dc_citation_issue]). |
MLA | Schlykow, V.,et al."Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)".APPLIED PHYSICS LETTERS 109.[db:dc_citation_issue](2016). |
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