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	Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)
	Schlykow, V.; Klesse, W. M.; Niu, G.; Taoka, N.; Yamamoto, Y.; Skibitzki, O.; Barget, M. R.; Zaumseil, P.; von Kanel, H.; Schubert, M. A.
刊名	APPLIED PHYSICS LETTERS
	2016
卷号	109期号:[db:dc_citation_issue]
ISSN号	0003-6951
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3227761
专题	西安交通大学
推荐引用方式 GB/T 7714	Schlykow, V.,Klesse, W. M.,Niu, G.,et al. Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)[J]. APPLIED PHYSICS LETTERS,2016,109([db:dc_citation_issue]).
APA	Schlykow, V..,Klesse, W. M..,Niu, G..,Taoka, N..,Yamamoto, Y..,...&Schroeder, T..(2016).Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001).APPLIED PHYSICS LETTERS,109([db:dc_citation_issue]).
MLA	Schlykow, V.,et al."Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)".APPLIED PHYSICS LETTERS 109.[db:dc_citation_issue](2016).

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