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	Characteristics of cylindrical surrounding-gate GaAsxSb1-x/InyGa1-y As heterojunction tunneling field-effect transistors
	Guan, Yun-He; Li, Zun-Chao; Luo, Dong-Xu; Meng, Qing-Zhi; Zhang, Ye-Fei
刊名	CHINESE PHYSICS B
	2016
卷号	25期号:[db:dc_citation_issue]
关键词	tunneling field-effect transistor resonant tunneling surrounding-gate subthreshold swing
ISSN号	1674-1056
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3225574
专题	西安交通大学
推荐引用方式 GB/T 7714	Guan, Yun-He,Li, Zun-Chao,Luo, Dong-Xu,et al. Characteristics of cylindrical surrounding-gate GaAsxSb1-x/InyGa1-y As heterojunction tunneling field-effect transistors[J]. CHINESE PHYSICS B,2016,25([db:dc_citation_issue]).
APA	Guan, Yun-He,Li, Zun-Chao,Luo, Dong-Xu,Meng, Qing-Zhi,&Zhang, Ye-Fei.(2016).Characteristics of cylindrical surrounding-gate GaAsxSb1-x/InyGa1-y As heterojunction tunneling field-effect transistors.CHINESE PHYSICS B,25([db:dc_citation_issue]).
MLA	Guan, Yun-He,et al."Characteristics of cylindrical surrounding-gate GaAsxSb1-x/InyGa1-y As heterojunction tunneling field-effect transistors".CHINESE PHYSICS B 25.[db:dc_citation_issue](2016).

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