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	A novel GaAs-based tunnel field-effect transistor without drain junction
	Luo, Dongxu; Li, Zunchao; Guan, Yunhe; Zhang, Yefei; Meng, Qingzhi
刊名	Hsi-An Chiao Tung Ta Hsueh/Journal of Xi'an Jiaotong University
	2016
卷号	50期号:[db:dc_citation_issue]页码:68-72 and 123
关键词	Band to band tunneling Doping concentration Driving current Manufacture process Off-state current On state current Subthreshold slope Tunnel barrier
ISSN号	0253-987X
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3223791
专题	西安交通大学
推荐引用方式 GB/T 7714	Luo, Dongxu,Li, Zunchao,Guan, Yunhe,et al. A novel GaAs-based tunnel field-effect transistor without drain junction[J]. Hsi-An Chiao Tung Ta Hsueh/Journal of Xi'an Jiaotong University,2016,50([db:dc_citation_issue]):68-72 and 123.
APA	Luo, Dongxu,Li, Zunchao,Guan, Yunhe,Zhang, Yefei,&Meng, Qingzhi.(2016).A novel GaAs-based tunnel field-effect transistor without drain junction.Hsi-An Chiao Tung Ta Hsueh/Journal of Xi'an Jiaotong University,50([db:dc_citation_issue]),68-72 and 123.
MLA	Luo, Dongxu,et al."A novel GaAs-based tunnel field-effect transistor without drain junction".Hsi-An Chiao Tung Ta Hsueh/Journal of Xi'an Jiaotong University 50.[db:dc_citation_issue](2016):68-72 and 123.

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