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	Theoretical prediction of the band offsets at the ZnO/anatase TiO2 and GaN/ZnO heterojunctions using the self-consistent ab initio DFT/GGA-1/2 method
	Fang, D. Q.; Zhang, S. L.
刊名	JOURNAL OF CHEMICAL PHYSICS
	2016
卷号	144期号:[db:dc_citation_issue]
ISSN号	0021-9606
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3223107
专题	西安交通大学
推荐引用方式 GB/T 7714	Fang, D. Q.,Zhang, S. L.. Theoretical prediction of the band offsets at the ZnO/anatase TiO2 and GaN/ZnO heterojunctions using the self-consistent ab initio DFT/GGA-1/2 method[J]. JOURNAL OF CHEMICAL PHYSICS,2016,144([db:dc_citation_issue]).
APA	Fang, D. Q.,&Zhang, S. L..(2016).Theoretical prediction of the band offsets at the ZnO/anatase TiO2 and GaN/ZnO heterojunctions using the self-consistent ab initio DFT/GGA-1/2 method.JOURNAL OF CHEMICAL PHYSICS,144([db:dc_citation_issue]).
MLA	Fang, D. Q.,et al."Theoretical prediction of the band offsets at the ZnO/anatase TiO2 and GaN/ZnO heterojunctions using the self-consistent ab initio DFT/GGA-1/2 method".JOURNAL OF CHEMICAL PHYSICS 144.[db:dc_citation_issue](2016).

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