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	Effects of Pr doping on crystalline orientation, microstructure, dielectric, and ferroelectric properties of Pb1.2?1.5xPrxZr0.52Ti0.48O3 thin films prepared by sol�Cgel method
	Chen, Da; Wang, Xing; Zhang, Renkai; Ding, Fei; Wang, Fengwei; Li, Biao; Zou, Helin
刊名	Journal of Materials Science: Materials in Electronics
	2019
卷号	30页码:20816-20822
ISSN号	09574522
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3222859
专题	大连理工大学
作者单位	Key Laboratory for Micro/Nano Technology and Systems of Liaoning Province, Dalian University of Technology, Dalian, 116024, China
推荐引用方式 GB/T 7714	Chen, Da,Wang, Xing,Zhang, Renkai,et al. Effects of Pr doping on crystalline orientation, microstructure, dielectric, and ferroelectric properties of Pb1.2?1.5xPrxZr0.52Ti0.48O3 thin films prepared by sol�Cgel method[J]. Journal of Materials Science: Materials in Electronics,2019,30:20816-20822.
APA	Chen, Da.,Wang, Xing.,Zhang, Renkai.,Ding, Fei.,Wang, Fengwei.,...&Zou, Helin.(2019).Effects of Pr doping on crystalline orientation, microstructure, dielectric, and ferroelectric properties of Pb1.2?1.5xPrxZr0.52Ti0.48O3 thin films prepared by sol�Cgel method.Journal of Materials Science: Materials in Electronics,30,20816-20822.
MLA	Chen, Da,et al."Effects of Pr doping on crystalline orientation, microstructure, dielectric, and ferroelectric properties of Pb1.2?1.5xPrxZr0.52Ti0.48O3 thin films prepared by sol�Cgel method".Journal of Materials Science: Materials in Electronics 30(2019):20816-20822.

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