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	Voltage sensor development for VFTO measurement with nominal voltage of 3 MV
	Zhang, Lu; Qi, Weidong; Huang, Guoqiang; Zhang, Qiaogen; Sun, Lei; Zhao, Yalin
刊名	Gaodianya Jishu/High Voltage Engineering
	2016
卷号	42期号:[db:dc_citation_issue]页码:1811-1818
关键词	Gas insulated switchgears Integral capacitance Transmission cables Very fast transient overvoltage (VFTO) Voltage sensor
ISSN号	1003-6520
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3222589
专题	西安交通大学
推荐引用方式 GB/T 7714	Zhang, Lu,Qi, Weidong,Huang, Guoqiang,et al. Voltage sensor development for VFTO measurement with nominal voltage of 3 MV[J]. Gaodianya Jishu/High Voltage Engineering,2016,42([db:dc_citation_issue]):1811-1818.
APA	Zhang, Lu,Qi, Weidong,Huang, Guoqiang,Zhang, Qiaogen,Sun, Lei,&Zhao, Yalin.(2016).Voltage sensor development for VFTO measurement with nominal voltage of 3 MV.Gaodianya Jishu/High Voltage Engineering,42([db:dc_citation_issue]),1811-1818.
MLA	Zhang, Lu,et al."Voltage sensor development for VFTO measurement with nominal voltage of 3 MV".Gaodianya Jishu/High Voltage Engineering 42.[db:dc_citation_issue](2016):1811-1818.

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