Voltage sensor development for VFTO measurement with nominal voltage of 3 MV | |
Zhang, Lu; Qi, Weidong; Huang, Guoqiang; Zhang, Qiaogen; Sun, Lei; Zhao, Yalin | |
刊名 | Gaodianya Jishu/High Voltage Engineering
![]() |
2016 | |
卷号 | 42期号:[db:dc_citation_issue]页码:1811-1818 |
关键词 | Gas insulated switchgears Integral capacitance Transmission cables Very fast transient overvoltage (VFTO) Voltage sensor |
ISSN号 | 1003-6520 |
DOI | [db:dc_identifier_doi] |
URL标识 | 查看原文 |
WOS记录号 | [DB:DC_IDENTIFIER_WOSID] |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/3222589 |
专题 | 西安交通大学 |
推荐引用方式 GB/T 7714 | Zhang, Lu,Qi, Weidong,Huang, Guoqiang,et al. Voltage sensor development for VFTO measurement with nominal voltage of 3 MV[J]. Gaodianya Jishu/High Voltage Engineering,2016,42([db:dc_citation_issue]):1811-1818. |
APA | Zhang, Lu,Qi, Weidong,Huang, Guoqiang,Zhang, Qiaogen,Sun, Lei,&Zhao, Yalin.(2016).Voltage sensor development for VFTO measurement with nominal voltage of 3 MV.Gaodianya Jishu/High Voltage Engineering,42([db:dc_citation_issue]),1811-1818. |
MLA | Zhang, Lu,et al."Voltage sensor development for VFTO measurement with nominal voltage of 3 MV".Gaodianya Jishu/High Voltage Engineering 42.[db:dc_citation_issue](2016):1811-1818. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论