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	Strain-induced transformation between vacancy voids and stacking fault tetrahedra in Cu
	Xv, Hongbo; Zhao, Jie; Ye, Fei; Tong, Ke
刊名	COMPUTATIONAL MATERIALS SCIENCE
	2019
卷号	158页码:359-368
关键词	Molecular dynamics Atomistic simulation Vacancy cluster Stacking fault tetrahedra Volumetric strain
ISSN号	0927-0256
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3221936
专题	大连理工大学
作者单位	1.Dalian Univ Technol, Sch Mat Sci & Engn, 2 Linggong Rd, Dalian 116024, Liaoning, Peoples R China. 2.Dalian Univ Technol, Sch Mat Sci & Engn, 2 Linggong Rd, Dalian 116024, Liaoning, Peoples R China. 3.Southern Univ Sci & Technol, Dept Mat Sci & Engn, 1088 Xueyuan Rd, Shenzhen 518055, Guangdong, Peoples R China.
推荐引用方式 GB/T 7714	Xv, Hongbo,Zhao, Jie,Ye, Fei,et al. Strain-induced transformation between vacancy voids and stacking fault tetrahedra in Cu[J]. COMPUTATIONAL MATERIALS SCIENCE,2019,158:359-368.
APA	Xv, Hongbo,Zhao, Jie,Ye, Fei,&Tong, Ke.(2019).Strain-induced transformation between vacancy voids and stacking fault tetrahedra in Cu.COMPUTATIONAL MATERIALS SCIENCE,158,359-368.
MLA	Xv, Hongbo,et al."Strain-induced transformation between vacancy voids and stacking fault tetrahedra in Cu".COMPUTATIONAL MATERIALS SCIENCE 158(2019):359-368.

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