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	Breakdown Ruggedness of Quasi-Vertical GaN-Based p-i-n Diodes on Si Substrates
	Zou, Xinbo; Zhang, Xu; Lu, Xing; Tang, Chak Wah; Lau, Kei May
刊名	IEEE ELECTRON DEVICE LETTERS
	2016
卷号	37期号:[db:dc_citation_issue]页码:1158-1161
关键词	GaN-on-Si p-i-n diodes breakdown ruggedness rectifiers
ISSN号	0741-3106
DOI	[db:dc_identifier_doi]
URL标识	查看原文
WOS记录号	[DB:DC_IDENTIFIER_WOSID]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3219517
专题	西安交通大学
推荐引用方式 GB/T 7714	Zou, Xinbo,Zhang, Xu,Lu, Xing,et al. Breakdown Ruggedness of Quasi-Vertical GaN-Based p-i-n Diodes on Si Substrates[J]. IEEE ELECTRON DEVICE LETTERS,2016,37([db:dc_citation_issue]):1158-1161.
APA	Zou, Xinbo,Zhang, Xu,Lu, Xing,Tang, Chak Wah,&Lau, Kei May.(2016).Breakdown Ruggedness of Quasi-Vertical GaN-Based p-i-n Diodes on Si Substrates.IEEE ELECTRON DEVICE LETTERS,37([db:dc_citation_issue]),1158-1161.
MLA	Zou, Xinbo,et al."Breakdown Ruggedness of Quasi-Vertical GaN-Based p-i-n Diodes on Si Substrates".IEEE ELECTRON DEVICE LETTERS 37.[db:dc_citation_issue](2016):1158-1161.

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