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	A high mobility C60 field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes A high mobility C60 field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes
	周建林[1,2]; 于军胜[1]; 于欣格[1]; 蔡欣洋[1]
	2012
卷号	21页码:498-503
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3195257
专题	重庆大学
推荐引用方式 GB/T 7714	周建林[1,2],于军胜[1],于欣格[1],et al. A high mobility C60 field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes A high mobility C60 field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes[J],2012,21:498-503.
APA	周建林[1,2],于军胜[1],于欣格[1],&蔡欣洋[1].(2012).A high mobility C60 field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes A high mobility C60 field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes.,21,498-503.
MLA	周建林[1,2],et al."A high mobility C60 field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes A high mobility C60 field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes".21(2012):498-503.

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