A high mobility C60 field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes A high mobility C60 field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes | |
周建林[1,2]; 于军胜[1]; 于欣格[1]; 蔡欣洋[1] | |
2012 | |
卷号 | 21页码:498-503 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/3195257 |
专题 | 重庆大学 |
推荐引用方式 GB/T 7714 | 周建林[1,2],于军胜[1],于欣格[1],et al. A high mobility C60 field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes A high mobility C60 field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes[J],2012,21:498-503. |
APA | 周建林[1,2],于军胜[1],于欣格[1],&蔡欣洋[1].(2012).A high mobility C60 field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes A high mobility C60 field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes.,21,498-503. |
MLA | 周建林[1,2],et al."A high mobility C60 field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes A high mobility C60 field-effect transistor with an ultrathin pentacene passivation layer and bathophenanthroline/metal bilayer electrodes".21(2012):498-503. |
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