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	A Novel Interface-Gate Structure for SOI Power MOSFET to Reduce Specific On-Resistance A Novel Interface-Gate Structure for SOI Power MOSFET to Reduce Specific On-Resistance
	胡盛东[1,2]; 金晶晶[1]; 陈银晖[1]; 蒋玉宇[1]; 程琨[1]; 周建林[1]; 刘江涛[1]; 黄蕊[1]; 姚胜杰[1]
	2015
卷号	0页码:171-173
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3046990
专题	重庆大学
推荐引用方式 GB/T 7714	胡盛东[1,2],金晶晶[1],陈银晖[1],et al. A Novel Interface-Gate Structure for SOI Power MOSFET to Reduce Specific On-Resistance A Novel Interface-Gate Structure for SOI Power MOSFET to Reduce Specific On-Resistance[J],2015,0:171-173.
APA	胡盛东[1,2].,金晶晶[1].,陈银晖[1].,蒋玉宇[1].,程琨[1].,...&姚胜杰[1].(2015).A Novel Interface-Gate Structure for SOI Power MOSFET to Reduce Specific On-Resistance A Novel Interface-Gate Structure for SOI Power MOSFET to Reduce Specific On-Resistance.,0,171-173.
MLA	胡盛东[1,2],et al."A Novel Interface-Gate Structure for SOI Power MOSFET to Reduce Specific On-Resistance A Novel Interface-Gate Structure for SOI Power MOSFET to Reduce Specific On-Resistance".0(2015):171-173.

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