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	Strained Germanium–Tin (GeSn) P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Featuring High Effective Hole Mobility
	Liu, Yan[1]; Yan, Jing[1]; Wang, Hongjuan[1]; Cheng, Buwen[2]; Han, Genquan[1]
	2015
卷号	36页码:980-986
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/3046444
专题	重庆大学
推荐引用方式 GB/T 7714	Liu, Yan[1],Yan, Jing[1],Wang, Hongjuan[1],et al. Strained Germanium–Tin (GeSn) P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Featuring High Effective Hole Mobility[J],2015,36:980-986.
APA	Liu, Yan[1],Yan, Jing[1],Wang, Hongjuan[1],Cheng, Buwen[2],&Han, Genquan[1].(2015).Strained Germanium–Tin (GeSn) P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Featuring High Effective Hole Mobility.,36,980-986.
MLA	Liu, Yan[1],et al."Strained Germanium–Tin (GeSn) P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Featuring High Effective Hole Mobility".36(2015):980-986.

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