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	A Silicon Tunnel Field-Effect Transistor with an In Situ Doped Single Crystalline Ge Source for Achieving Sub-60 mV/decade Subthreshold Swing
	Liu Yan[1]; Wang Hong-Juan[1]; Yan Jing[1]; Han Gen-Quan[1]
	2013
卷号	30
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2967588
专题	重庆大学
推荐引用方式 GB/T 7714	Liu Yan[1],Wang Hong-Juan[1],Yan Jing[1],et al. A Silicon Tunnel Field-Effect Transistor with an In Situ Doped Single Crystalline Ge Source for Achieving Sub-60 mV/decade Subthreshold Swing[J],2013,30.
APA	Liu Yan[1],Wang Hong-Juan[1],Yan Jing[1],&Han Gen-Quan[1].(2013).A Silicon Tunnel Field-Effect Transistor with an In Situ Doped Single Crystalline Ge Source for Achieving Sub-60 mV/decade Subthreshold Swing.,30.
MLA	Liu Yan[1],et al."A Silicon Tunnel Field-Effect Transistor with an In Situ Doped Single Crystalline Ge Source for Achieving Sub-60 mV/decade Subthreshold Swing".30(2013).

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