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	Fabrication and Enhanced Photoelectrochemical Performance of MoS2/S-Doped g-C3N4 Heterojunction Film
	Ye, Lijuan[1]; Wang, Dan[2]; Chen, Shijian[1]
	2016
卷号	8页码:5280-5289
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2964151
专题	重庆大学
推荐引用方式 GB/T 7714	Ye, Lijuan[1],Wang, Dan[2],Chen, Shijian[1]. Fabrication and Enhanced Photoelectrochemical Performance of MoS2/S-Doped g-C3N4 Heterojunction Film[J],2016,8:5280-5289.
APA	Ye, Lijuan[1],Wang, Dan[2],&Chen, Shijian[1].(2016).Fabrication and Enhanced Photoelectrochemical Performance of MoS2/S-Doped g-C3N4 Heterojunction Film.,8,5280-5289.
MLA	Ye, Lijuan[1],et al."Fabrication and Enhanced Photoelectrochemical Performance of MoS2/S-Doped g-C3N4 Heterojunction Film".8(2016):5280-5289.

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