| Boron-doped diamond thin films homoepitaxial growth and preparation of Schottky barrier diode | |
| Wang, Jinjun; Wang, Xiaoliang; Zhang, Jingwen; Wang, Xia | |
| 刊名 | Guangxue Xuebao/Acta Optica Sinica
 |
| 2016 | |
| 卷号 | 36 |
| 关键词 | Conduction resistance Diamond thin film Electron beam evaporation High temperature and high pressure Homoepitaxial growth Microwave plasma chemical vapor depositions Reverse breakdown voltage Reverse-saturation currents |
| ISSN号 | 0253-2239 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2952246 |
| 专题 | 西安交通大学 |
| 推荐引用方式 GB/T 7714 | Wang, Jinjun,Wang, Xiaoliang,Zhang, Jingwen,et al. Boron-doped diamond thin films homoepitaxial growth and preparation of Schottky barrier diode[J]. Guangxue Xuebao/Acta Optica Sinica,2016,36. |
| APA | Wang, Jinjun,Wang, Xiaoliang,Zhang, Jingwen,&Wang, Xia.(2016).Boron-doped diamond thin films homoepitaxial growth and preparation of Schottky barrier diode.Guangxue Xuebao/Acta Optica Sinica,36. |
| MLA | Wang, Jinjun,et al."Boron-doped diamond thin films homoepitaxial growth and preparation of Schottky barrier diode".Guangxue Xuebao/Acta Optica Sinica 36(2016). |
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