Emission Properties of Porous Silicon Electron Emitters Formed by Pulsed Anodic Etching | |
Hu, W. B.; Zhao, W.; Fan, J. L.; Wu, S. L.; Zhang, J. T. | |
刊名 | JOURNAL OF ELECTRONIC MATERIALS
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2017 | |
卷号 | 46页码:895-902 |
关键词 | electron emitter electrochemical oxidation pulsed anodic etching Porous silicon |
ISSN号 | 0361-5235 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2949522 |
专题 | 西安交通大学 |
推荐引用方式 GB/T 7714 | Hu, W. B.,Zhao, W.,Fan, J. L.,et al. Emission Properties of Porous Silicon Electron Emitters Formed by Pulsed Anodic Etching[J]. JOURNAL OF ELECTRONIC MATERIALS,2017,46:895-902. |
APA | Hu, W. B.,Zhao, W.,Fan, J. L.,Wu, S. L.,&Zhang, J. T..(2017).Emission Properties of Porous Silicon Electron Emitters Formed by Pulsed Anodic Etching.JOURNAL OF ELECTRONIC MATERIALS,46,895-902. |
MLA | Hu, W. B.,et al."Emission Properties of Porous Silicon Electron Emitters Formed by Pulsed Anodic Etching".JOURNAL OF ELECTRONIC MATERIALS 46(2017):895-902. |
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