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	A theoretical study of dielectric tensor, Born effective charges, LO-TO splitting and infrared response of Al4SiC4 and Al4Si2C5
	Li, Y. F.; Xiao, B.; Sun, L.; Gao, Y. M.; Cheng, Y. H.
刊名	JOURNAL OF ALLOYS AND COMPOUNDS
	2017
卷号	692页码:713-719
关键词	LO-TO splitting Aluminum silicon carbide Born effective charges Dielectric constants
ISSN号	0925-8388
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2945258
专题	西安交通大学
推荐引用方式 GB/T 7714	Li, Y. F.,Xiao, B.,Sun, L.,et al. A theoretical study of dielectric tensor, Born effective charges, LO-TO splitting and infrared response of Al4SiC4 and Al4Si2C5[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2017,692:713-719.
APA	Li, Y. F.,Xiao, B.,Sun, L.,Gao, Y. M.,&Cheng, Y. H..(2017).A theoretical study of dielectric tensor, Born effective charges, LO-TO splitting and infrared response of Al4SiC4 and Al4Si2C5.JOURNAL OF ALLOYS AND COMPOUNDS,692,713-719.
MLA	Li, Y. F.,et al."A theoretical study of dielectric tensor, Born effective charges, LO-TO splitting and infrared response of Al4SiC4 and Al4Si2C5".JOURNAL OF ALLOYS AND COMPOUNDS 692(2017):713-719.

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