| Improved electron emission properties of the porous silicon emitter by chemical surface modification | |
| Wang, Wenjiang; He, Li; Zhang, Xiaoning; Zhang, He | |
| 刊名 | SEMICONDUCTOR SCIENCE AND TECHNOLOGY
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| 2017 | |
| 卷号 | 32 |
| 关键词 | electron emission characteristics chemical dipping method metal contact properties porous silicon |
| ISSN号 | 0268-1242 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2935220 |
| 专题 | 西安交通大学 |
| 推荐引用方式 GB/T 7714 | Wang, Wenjiang,He, Li,Zhang, Xiaoning,et al. Improved electron emission properties of the porous silicon emitter by chemical surface modification[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2017,32. |
| APA | Wang, Wenjiang,He, Li,Zhang, Xiaoning,&Zhang, He.(2017).Improved electron emission properties of the porous silicon emitter by chemical surface modification.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,32. |
| MLA | Wang, Wenjiang,et al."Improved electron emission properties of the porous silicon emitter by chemical surface modification".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 32(2017). |
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