Origin of low-temperature photoluminescence from SnO2 nanowires fabricated by thermal evaporation and annealed in different ambients

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	Origin of low-temperature photoluminescence from SnO2 nanowires fabricated by thermal evaporation and annealed in different ambients
	Luo, SH ; Chu, PK ; Liu, WL ; Zhang, M ; Lin, CL
刊名	APPLIED PHYSICS LETTERS
	2006-01-01
卷号	88 期号:18 页码:183112-183112
关键词	SEMICONDUCTING OXIDE NANOBELTS OPTICAL-PROPERTIES LARGE-SCALE NANORODS GROWTH SPECTROSCOPY NANORIBBONS SENSORS
ISSN号	0003-6951
通讯作者	Chu, PK, City Univ Hong Kong, Dept Phys Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
学科主题	Physics, Applied
收录类别	SCI
语种	英语
公开日期	2011-11-08
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/17307]
专题	上海微系统与信息技术研究所_太赫兹、微波射频技术_期刊论文
推荐引用方式 GB/T 7714	Luo, SH,Chu, PK,Liu, WL,et al. Origin of low-temperature photoluminescence from SnO2 nanowires fabricated by thermal evaporation and annealed in different ambients[J]. APPLIED PHYSICS LETTERS,2006,88(18):183112-183112.
APA	Luo, SH,Chu, PK,Liu, WL,Zhang, M,&Lin, CL.(2006).Origin of low-temperature photoluminescence from SnO2 nanowires fabricated by thermal evaporation and annealed in different ambients.APPLIED PHYSICS LETTERS,88(18),183112-183112.
MLA	Luo, SH,et al."Origin of low-temperature photoluminescence from SnO2 nanowires fabricated by thermal evaporation and annealed in different ambients".APPLIED PHYSICS LETTERS 88.18(2006):183112-183112.