Temperature dependence of current-voltage characteristics of terahertz quantum-well photodetectors

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	Temperature dependence of current-voltage characteristics of terahertz quantum-well photodetectors
	Tan, ZY ; Guo, XG ; Cao, JC ; Li, H ; Wang, X ; Feng, SL ; Wasilewski, ZR ; Liu, HC
刊名	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
	2009-01-01
卷号	24 期号:11 页码:115014-115014
关键词	INFRARED PHOTODETECTORS VERTICAL TRANSPORT SCATTERING LASER
ISSN号	0268-1242
通讯作者	Tan, ZY, Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, 865 Changning Rd, Shanghai 200050, Peoples R China
学科主题	Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter
收录类别	SCI
语种	英语
公开日期	2011-11-03
内容类型	期刊论文
源URL	[http://ir.sim.ac.cn/handle/331004/11067]
专题	上海微系统与信息技术研究所_太赫兹、微波射频技术_期刊论文
推荐引用方式 GB/T 7714	Tan, ZY,Guo, XG,Cao, JC,et al. Temperature dependence of current-voltage characteristics of terahertz quantum-well photodetectors[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2009,24(11):115014-115014.
APA	Tan, ZY.,Guo, XG.,Cao, JC.,Li, H.,Wang, X.,...&Liu, HC.(2009).Temperature dependence of current-voltage characteristics of terahertz quantum-well photodetectors.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,24(11),115014-115014.
MLA	Tan, ZY,et al."Temperature dependence of current-voltage characteristics of terahertz quantum-well photodetectors".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 24.11(2009):115014-115014.