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	High-Sensitivity Light Detection via Gate Tuning of Organometallic Perovskite/PCBM Bulk Heterojunctions on Ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 Gated Graphene Field Effect Transistors
	Wu, Liping; Qin, Liang; Zhang, Yong; Alamri, Mohammed; Gong, Maogang; Zhang, Wang; Zhang, Di; Chan, Wai-Lun; Wu, Judy Z.
刊名	ACS APPLIED MATERIALS & INTERFACES
	2018
卷号	10页码:12824-12830
关键词	bulk heterojunction graphene field effect transistor ferroelectric gate organometallic perovskite
ISSN号	1944-8244
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2919622
专题	西安交通大学
推荐引用方式 GB/T 7714	Wu, Liping,Qin, Liang,Zhang, Yong,et al. High-Sensitivity Light Detection via Gate Tuning of Organometallic Perovskite/PCBM Bulk Heterojunctions on Ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 Gated Graphene Field Effect Transistors[J]. ACS APPLIED MATERIALS & INTERFACES,2018,10:12824-12830.
APA	Wu, Liping.,Qin, Liang.,Zhang, Yong.,Alamri, Mohammed.,Gong, Maogang.,...&Wu, Judy Z..(2018).High-Sensitivity Light Detection via Gate Tuning of Organometallic Perovskite/PCBM Bulk Heterojunctions on Ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 Gated Graphene Field Effect Transistors.ACS APPLIED MATERIALS & INTERFACES,10,12824-12830.
MLA	Wu, Liping,et al."High-Sensitivity Light Detection via Gate Tuning of Organometallic Perovskite/PCBM Bulk Heterojunctions on Ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 Gated Graphene Field Effect Transistors".ACS APPLIED MATERIALS & INTERFACES 10(2018):12824-12830.

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