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	Improvement of electrical characteristics and stability of IGZO TFT through surface single crystallization of IGZO film at room temperature
	Zhang, He; Wang, Yaogong; Zhang, Xiaoning; Liu, Chunliang
刊名	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
	2018
卷号	33
关键词	room temperature preparation surface single crystalline cesium adsorption IGZO TFT
ISSN号	0268-1242
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2918299
专题	西安交通大学
推荐引用方式 GB/T 7714	Zhang, He,Wang, Yaogong,Zhang, Xiaoning,et al. Improvement of electrical characteristics and stability of IGZO TFT through surface single crystallization of IGZO film at room temperature[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2018,33.
APA	Zhang, He,Wang, Yaogong,Zhang, Xiaoning,&Liu, Chunliang.(2018).Improvement of electrical characteristics and stability of IGZO TFT through surface single crystallization of IGZO film at room temperature.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,33.
MLA	Zhang, He,et al."Improvement of electrical characteristics and stability of IGZO TFT through surface single crystallization of IGZO film at room temperature".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 33(2018).

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