Fabrication of dual-termination Schottky barrier diode by using oxygen-/fluorine-terminated diamond | |
Zhao, Dan; Liu, Zhangcheng; Wang, Juan; Liang, Yan; Nauman, Muhammad; Fu, Jiao; Wang, Yan-Feng; Fan, Shuwei; Wang, Wei; Wang, Hong-Xing | |
刊名 | APPLIED SURFACE SCIENCE
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2018 | |
卷号 | 457页码:411-416 |
关键词 | XPS Barrier height OT-/FT-diamond Surface treatment SBD |
ISSN号 | 0169-4332 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2913693 |
专题 | 西安交通大学 |
推荐引用方式 GB/T 7714 | Zhao, Dan,Liu, Zhangcheng,Wang, Juan,et al. Fabrication of dual-termination Schottky barrier diode by using oxygen-/fluorine-terminated diamond[J]. APPLIED SURFACE SCIENCE,2018,457:411-416. |
APA | Zhao, Dan.,Liu, Zhangcheng.,Wang, Juan.,Liang, Yan.,Nauman, Muhammad.,...&Wang, Hong-Xing.(2018).Fabrication of dual-termination Schottky barrier diode by using oxygen-/fluorine-terminated diamond.APPLIED SURFACE SCIENCE,457,411-416. |
MLA | Zhao, Dan,et al."Fabrication of dual-termination Schottky barrier diode by using oxygen-/fluorine-terminated diamond".APPLIED SURFACE SCIENCE 457(2018):411-416. |
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