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Fabrication of dual-termination Schottky barrier diode by using oxygen-/fluorine-terminated diamond
Zhao, Dan; Liu, Zhangcheng; Wang, Juan; Liang, Yan; Nauman, Muhammad; Fu, Jiao; Wang, Yan-Feng; Fan, Shuwei; Wang, Wei; Wang, Hong-Xing
刊名APPLIED SURFACE SCIENCE
2018
卷号457页码:411-416
关键词XPS Barrier height OT-/FT-diamond Surface treatment SBD
ISSN号0169-4332
URL标识查看原文
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2913693
专题西安交通大学
推荐引用方式
GB/T 7714
Zhao, Dan,Liu, Zhangcheng,Wang, Juan,et al. Fabrication of dual-termination Schottky barrier diode by using oxygen-/fluorine-terminated diamond[J]. APPLIED SURFACE SCIENCE,2018,457:411-416.
APA Zhao, Dan.,Liu, Zhangcheng.,Wang, Juan.,Liang, Yan.,Nauman, Muhammad.,...&Wang, Hong-Xing.(2018).Fabrication of dual-termination Schottky barrier diode by using oxygen-/fluorine-terminated diamond.APPLIED SURFACE SCIENCE,457,411-416.
MLA Zhao, Dan,et al."Fabrication of dual-termination Schottky barrier diode by using oxygen-/fluorine-terminated diamond".APPLIED SURFACE SCIENCE 457(2018):411-416.
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