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	Opposite change trend of electrical behavior curves near the threshold between GaAs- and GaN-multi-quantum-well laser diodes
	Liefeng Feng; Shupeng Wang; Yang Li; Xiufang Yang; Ding Li; Cunda Wang
刊名	Applied Physics B
	2018
卷号	Vol.124 No.3
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2903426
专题	天津大学
作者单位	LiefengFeng 1 Email author ShupengWang 1 YangLi 2 XiufangYang 1 DingLi 3 Email author CundaWang 1 1. Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Department of Applied Physics Tianjin University Tianjin People’s Republic of China 2. Hainan Technology and Business College Haikou People’s Republic of China 3. Research Center for Wide-band Gap Semiconductors, State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics Peking University Beijing People’s Republic of China
推荐引用方式 GB/T 7714	Liefeng Feng,Shupeng Wang,Yang Li,et al. Opposite change trend of electrical behavior curves near the threshold between GaAs- and GaN-multi-quantum-well laser diodes[J]. Applied Physics B,2018,Vol.124 No.3.
APA	Liefeng Feng,Shupeng Wang,Yang Li,Xiufang Yang,Ding Li,&Cunda Wang.(2018).Opposite change trend of electrical behavior curves near the threshold between GaAs- and GaN-multi-quantum-well laser diodes.Applied Physics B,Vol.124 No.3.
MLA	Liefeng Feng,et al."Opposite change trend of electrical behavior curves near the threshold between GaAs- and GaN-multi-quantum-well laser diodes".Applied Physics B Vol.124 No.3(2018).

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