| Resistive Switching Memory Based on Three-Dimensionally Confined Ag Quantum Dots Embedded in Ultra Thin Polyimide Layers | |
| Wu, Chaoxing; Li, Fushan; Guo, Tailiang | |
| 2013 | |
| 关键词 | Polyimide Ag Quantum Dots Charge Trapping Mechanism Resistive Switching Memory |
| 卷号 | 13 |
| 页码 | 1173-1176 |
| 会议录 | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
 |
| URL标识 | 查看原文 |
| ISSN号 | 1533-4880 |
| 内容类型 | 会议论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2901458 |
| 专题 | 福州大学 |
| 推荐引用方式 GB/T 7714 | Wu, Chaoxing,Li, Fushan,Guo, Tailiang. Resistive Switching Memory Based on Three-Dimensionally Confined Ag Quantum Dots Embedded in Ultra Thin Polyimide Layers[C]. 见:. |
| 个性服务 |
| 查看访问统计 |
| 相关权益政策 |
| 暂无数据 |
| 收藏/分享 |
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论