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	Fabrication and properties of planar gate field emission arrays with patterned ZnO nanowires
	Zhang, Y. A.; Lin, T.; Lin, T. H.; Zhou, X. T.; Guo, T. L.
刊名	MATERIALS TECHNOLOGY
	2014
卷号	29页码:313-318
关键词	Planar gate triode Patterned growth ZnO nanowires Field emission
ISSN号	1066-7857
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2900426
专题	福州大学
推荐引用方式 GB/T 7714	Zhang, Y. A.,Lin, T.,Lin, T. H.,et al. Fabrication and properties of planar gate field emission arrays with patterned ZnO nanowires[J]. MATERIALS TECHNOLOGY,2014,29:313-318.
APA	Zhang, Y. A.,Lin, T.,Lin, T. H.,Zhou, X. T.,&Guo, T. L..(2014).Fabrication and properties of planar gate field emission arrays with patterned ZnO nanowires.MATERIALS TECHNOLOGY,29,313-318.
MLA	Zhang, Y. A.,et al."Fabrication and properties of planar gate field emission arrays with patterned ZnO nanowires".MATERIALS TECHNOLOGY 29(2014):313-318.

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