Fabrication and properties of planar gate field emission arrays with patterned ZnO nanowires | |
Zhang, Y. A.; Lin, T.; Lin, T. H.; Zhou, X. T.; Guo, T. L. | |
刊名 | MATERIALS TECHNOLOGY
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2014 | |
卷号 | 29页码:313-318 |
关键词 | Planar gate triode Patterned growth ZnO nanowires Field emission |
ISSN号 | 1066-7857 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2900426 |
专题 | 福州大学 |
推荐引用方式 GB/T 7714 | Zhang, Y. A.,Lin, T.,Lin, T. H.,et al. Fabrication and properties of planar gate field emission arrays with patterned ZnO nanowires[J]. MATERIALS TECHNOLOGY,2014,29:313-318. |
APA | Zhang, Y. A.,Lin, T.,Lin, T. H.,Zhou, X. T.,&Guo, T. L..(2014).Fabrication and properties of planar gate field emission arrays with patterned ZnO nanowires.MATERIALS TECHNOLOGY,29,313-318. |
MLA | Zhang, Y. A.,et al."Fabrication and properties of planar gate field emission arrays with patterned ZnO nanowires".MATERIALS TECHNOLOGY 29(2014):313-318. |
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