Circuit simulation of RTD and HPT monolithic optoelectronic integration | |
Niu, P.-J.a; Guo, W.-L.b; Liang, H.-L.b; Zhang, S.-L.b; Miao, C.-Y.a; Wang, J.-H.a; Qi, H.-T.b | |
刊名 | ADVANCED MATERIALS AND DEVICES FOR SENSING AND IMAGING
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2002 | |
卷号 | Vol.4919页码:446-448 |
关键词 | Resonant Tunneling Diode (RTD) Heterojunction Bipolar Phototransistor (BPT) Negative Differential Resistance (NDR) Photoelectric Monostable-Bistable Transition Logic Elements (PMOBILE\'s) |
ISSN号 | 0277-786X |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2899445 |
专题 | 天津大学 |
作者单位 | 1.aSch. of Information and Commun. Eng., Tianjin Polytechnic University, 63 Chenglin Zhuang Road, Tianjin, 300160, China 2.bSchool of Electronic Info. Eng., Tianjin University, China |
推荐引用方式 GB/T 7714 | Niu, P.-J.a,Guo, W.-L.b,Liang, H.-L.b,et al. Circuit simulation of RTD and HPT monolithic optoelectronic integration[J]. ADVANCED MATERIALS AND DEVICES FOR SENSING AND IMAGING,2002,Vol.4919:446-448. |
APA | Niu, P.-J.a.,Guo, W.-L.b.,Liang, H.-L.b.,Zhang, S.-L.b.,Miao, C.-Y.a.,...&Qi, H.-T.b.(2002).Circuit simulation of RTD and HPT monolithic optoelectronic integration.ADVANCED MATERIALS AND DEVICES FOR SENSING AND IMAGING,Vol.4919,446-448. |
MLA | Niu, P.-J.a,et al."Circuit simulation of RTD and HPT monolithic optoelectronic integration".ADVANCED MATERIALS AND DEVICES FOR SENSING AND IMAGING Vol.4919(2002):446-448. |
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