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	Circuit simulation of RTD and HPT monolithic optoelectronic integration
	Niu, P.-J.a; Guo, W.-L.b; Liang, H.-L.b; Zhang, S.-L.b; Miao, C.-Y.a; Wang, J.-H.a; Qi, H.-T.b
刊名	ADVANCED MATERIALS AND DEVICES FOR SENSING AND IMAGING
	2002
卷号	Vol.4919页码:446-448
关键词	Resonant Tunneling Diode (RTD) Heterojunction Bipolar Phototransistor (BPT) Negative Differential Resistance (NDR) Photoelectric Monostable-Bistable Transition Logic Elements (PMOBILE\'s)
ISSN号	0277-786X
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2899445
专题	天津大学
作者单位	1.aSch. of Information and Commun. Eng., Tianjin Polytechnic University, 63 Chenglin Zhuang Road, Tianjin, 300160, China 2.bSchool of Electronic Info. Eng., Tianjin University, China
推荐引用方式 GB/T 7714	Niu, P.-J.a,Guo, W.-L.b,Liang, H.-L.b,et al. Circuit simulation of RTD and HPT monolithic optoelectronic integration[J]. ADVANCED MATERIALS AND DEVICES FOR SENSING AND IMAGING,2002,Vol.4919:446-448.
APA	Niu, P.-J.a.,Guo, W.-L.b.,Liang, H.-L.b.,Zhang, S.-L.b.,Miao, C.-Y.a.,...&Qi, H.-T.b.(2002).Circuit simulation of RTD and HPT monolithic optoelectronic integration.ADVANCED MATERIALS AND DEVICES FOR SENSING AND IMAGING,Vol.4919,446-448.
MLA	Niu, P.-J.a,et al."Circuit simulation of RTD and HPT monolithic optoelectronic integration".ADVANCED MATERIALS AND DEVICES FOR SENSING AND IMAGING Vol.4919(2002):446-448.

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