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	An Experimental Analysis of Residual Stress Measurements inPorous Silicon Using Micro-Raman Spectroscopy
	Lei, Z.-K.a; Kang, Y.-L.a; Hu, M.b; Qiu, Y.Yua; Xu, H.a; Niu, H.-P.a
刊名	Chinese Physics Letters
	2004
卷号	Vol.21 No.2
ISSN号	0256-307X
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2898642
专题	天津大学
作者单位	1.aDepartment of Mechanics, School of Mechanical Engineering, Tianjin University, Tianjin 300072, China 2.bDepartment of Electronic Science, Sch. of Electron. Info. Engineering, Tianjin University, Tianjin 300072, China
推荐引用方式 GB/T 7714	Lei, Z.-K.a,Kang, Y.-L.a,Hu, M.b,et al. An Experimental Analysis of Residual Stress Measurements inPorous Silicon Using Micro-Raman Spectroscopy[J]. Chinese Physics Letters,2004,Vol.21 No.2.
APA	Lei, Z.-K.a,Kang, Y.-L.a,Hu, M.b,Qiu, Y.Yua,Xu, H.a,&Niu, H.-P.a.(2004).An Experimental Analysis of Residual Stress Measurements inPorous Silicon Using Micro-Raman Spectroscopy.Chinese Physics Letters,Vol.21 No.2.
MLA	Lei, Z.-K.a,et al."An Experimental Analysis of Residual Stress Measurements inPorous Silicon Using Micro-Raman Spectroscopy".Chinese Physics Letters Vol.21 No.2(2004).

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