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	Die Bonding of High Power 808 nm Laser Diodes With Nanosilver Paste
	Yan, Y.a; Chen, X.b,c; Liu, X.c; Mei, Y.d; Lu, G.-Q.e
刊名	Journal of Electronic Packaging
	2012
卷号	Vol.134 No.4页码:041003
关键词	nanosilver paste laser diodes die bonding
ISSN号	1043-7398;1528-9044
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2898035
专题	天津大学
作者单位	1.aSchool of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, China 2.bXi'An Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'An Focuslight Technologies Co., Ltd., Xi'an, Shaanxi 710119, China 3.cTianjin Key Laboratory of Advanced Joining Technology, School of Materials Science and Engineering, Tianjin University, Tianjin 710119, China 4.dTianjin University, Virginia Tech Tianjin Key Laboratory of Advanced Joining Technology, School of Materials Science and Engineering, Tianjin, China 5.eDepartment of Materials Science and Engineering, Virginia Tech, Blacksburg, VA 24061, United States
推荐引用方式 GB/T 7714	Yan, Y.a,Chen, X.b,c,Liu, X.c,et al. Die Bonding of High Power 808 nm Laser Diodes With Nanosilver Paste[J]. Journal of Electronic Packaging,2012,Vol.134 No.4:041003.
APA	Yan, Y.a,Chen, X.b,c,Liu, X.c,Mei, Y.d,&Lu, G.-Q.e.(2012).Die Bonding of High Power 808 nm Laser Diodes With Nanosilver Paste.Journal of Electronic Packaging,Vol.134 No.4,041003.
MLA	Yan, Y.a,et al."Die Bonding of High Power 808 nm Laser Diodes With Nanosilver Paste".Journal of Electronic Packaging Vol.134 No.4(2012):041003.

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