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	Thermal oxidation about big area silicon wafer with high aspect ratio microstructure
	Luo, J.-D.a; Zhou, B.a; Lü, W.-F.a; Lei, Y.-H.a,b; Guo, J.-C.a; Niu, H.-B.a
刊名	Guangdian Gongcheng
	2012
卷号	Vol.39 No.8页码:105-110
ISSN号	1003-501X
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2896636
专题	天津大学
作者单位	1.aKey Laboratory of Optoelectronic Devices and System of Ministry of Education and Guangdong Province, Institute of Optoelectronics, Shenzhen University, Shenzhen 518060, Guangdong Province, China 2.bInstitute of Precision Instrument and Optoelectronic Engineering, Tianjin University, Tianjin 300000, China
推荐引用方式 GB/T 7714	Luo, J.-D.a,Zhou, B.a,Lü, W.-F.a,et al. Thermal oxidation about big area silicon wafer with high aspect ratio microstructure[J]. Guangdian Gongcheng,2012,Vol.39 No.8:105-110.
APA	Luo, J.-D.a,Zhou, B.a,Lü, W.-F.a,Lei, Y.-H.a,b,Guo, J.-C.a,&Niu, H.-B.a.(2012).Thermal oxidation about big area silicon wafer with high aspect ratio microstructure.Guangdian Gongcheng,Vol.39 No.8,105-110.
MLA	Luo, J.-D.a,et al."Thermal oxidation about big area silicon wafer with high aspect ratio microstructure".Guangdian Gongcheng Vol.39 No.8(2012):105-110.

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