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	Resistive switching memory based on organic/inorganic hybrid perovskite materials
	Liu, Yang; Li, Fushan; Chen, Zhixin; Guo, Tailiang; Wu, Chaoxing; Kim, Tae Whan
刊名	VACUUM
	2016
卷号	130页码:109-112
关键词	Perovskite Resistive switching Memory
ISSN号	0042-207X
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2896103
专题	福州大学
推荐引用方式 GB/T 7714	Liu, Yang,Li, Fushan,Chen, Zhixin,et al. Resistive switching memory based on organic/inorganic hybrid perovskite materials[J]. VACUUM,2016,130:109-112.
APA	Liu, Yang,Li, Fushan,Chen, Zhixin,Guo, Tailiang,Wu, Chaoxing,&Kim, Tae Whan.(2016).Resistive switching memory based on organic/inorganic hybrid perovskite materials.VACUUM,130,109-112.
MLA	Liu, Yang,et al."Resistive switching memory based on organic/inorganic hybrid perovskite materials".VACUUM 130(2016):109-112.

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