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	Carrier transport and memory mechanisms of multilevel resistive memory devices with an intermediate state based on double-stacked organic/inorganic nanocomposites
	Ma, Zehao; Wu, Chaoxing; Lee, Dea Uk; Li, Fushan; Kim, Tae Whan
刊名	ORGANIC ELECTRONICS
	2016
卷号	28页码:20-24
关键词	Memory mechanisms Resistive memory device PMMA CdSe/ZnS QD Multilevel characteristics
ISSN号	1566-1199
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2895244
专题	福州大学
推荐引用方式 GB/T 7714	Ma, Zehao,Wu, Chaoxing,Lee, Dea Uk,et al. Carrier transport and memory mechanisms of multilevel resistive memory devices with an intermediate state based on double-stacked organic/inorganic nanocomposites[J]. ORGANIC ELECTRONICS,2016,28:20-24.
APA	Ma, Zehao,Wu, Chaoxing,Lee, Dea Uk,Li, Fushan,&Kim, Tae Whan.(2016).Carrier transport and memory mechanisms of multilevel resistive memory devices with an intermediate state based on double-stacked organic/inorganic nanocomposites.ORGANIC ELECTRONICS,28,20-24.
MLA	Ma, Zehao,et al."Carrier transport and memory mechanisms of multilevel resistive memory devices with an intermediate state based on double-stacked organic/inorganic nanocomposites".ORGANIC ELECTRONICS 28(2016):20-24.

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