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	The design and fabrication on gate type resonant tunneling transistor
	Guo, W.a,b; Liang, H.a; Song, R.a; Zhang, S.a; Mao, L.a; Hu, L.a; Li, J.a; Qi, H.a; Feng, Z.b; Tian, G.b
刊名	Frontiers of Electrical and Electronic Engineering in China
	2008
卷号	Vol.3 NO.2页码:227-233
关键词	resonant tunneling transistor (RTT) - gate controlled device - GaAs based quantum device
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2892581
专题	天津大学
作者单位	1.aSchool of Electronic Information Engineering, Tianjin University, Tianjin 300072, China 2.b13th Institute of CETC, Shijiazhuang 050051, China
推荐引用方式 GB/T 7714	Guo, W.a,b,Liang, H.a,Song, R.a,et al. The design and fabrication on gate type resonant tunneling transistor[J]. Frontiers of Electrical and Electronic Engineering in China,2008,Vol.3 NO.2:227-233.
APA	Guo, W.a,b.,Liang, H.a.,Song, R.a.,Zhang, S.a.,Mao, L.a.,...&Li, X.b.(2008).The design and fabrication on gate type resonant tunneling transistor.Frontiers of Electrical and Electronic Engineering in China,Vol.3 NO.2,227-233.
MLA	Guo, W.a,b,et al."The design and fabrication on gate type resonant tunneling transistor".Frontiers of Electrical and Electronic Engineering in China Vol.3 NO.2(2008):227-233.

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