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	In-situ experiment on critical thickness of brittle-ductile transition of single-crystal silicon
	Liu, B.; Xu, Z.-W.; Li, R.; He, Z.-D.
刊名	Gongcheng Kexue Xuebao/Chinese Journal of Engineering
	2019
卷号	Vol.41 No.3页码:343-349
关键词	Brittle-ductile transition Crystal orientation Online observation Single-crystal silicon Tool edge radius
ISSN号	2095-9389
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2887757
专题	天津大学
作者单位	1.a School of Mechanical Engineering, Tianjin University of Commerce, Tianjin, 300134, China 2.b School of Precision Instrument & Opto-Electronics Engineering, Tianjin University, Tianjin, 300072, China
推荐引用方式 GB/T 7714	Liu, B.,Xu, Z.-W.,Li, R.,et al. In-situ experiment on critical thickness of brittle-ductile transition of single-crystal silicon[J]. Gongcheng Kexue Xuebao/Chinese Journal of Engineering,2019,Vol.41 No.3:343-349.
APA	Liu, B.,Xu, Z.-W.,Li, R.,&He, Z.-D..(2019).In-situ experiment on critical thickness of brittle-ductile transition of single-crystal silicon.Gongcheng Kexue Xuebao/Chinese Journal of Engineering,Vol.41 No.3,343-349.
MLA	Liu, B.,et al."In-situ experiment on critical thickness of brittle-ductile transition of single-crystal silicon".Gongcheng Kexue Xuebao/Chinese Journal of Engineering Vol.41 No.3(2019):343-349.

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