Investigation of Cycling-Induced Dummy Cell Disturbance in 3D NAND Flash Memory | |
Huo ZL(霍宗亮); Chen GX(陈国星); Zhang Y(张瑜); Jiang DD(姜丹丹); Jin L(靳磊); Zou XQ(邹兴奇) | |
刊名 | IEEE ELECTRON DEVICE LETTERS |
2018-02-01 | |
文献子类 | 期刊论文 |
内容类型 | 期刊论文 |
源URL | [http://159.226.55.107/handle/172511/19264] |
专题 | 微电子研究所_存储器研发中心 |
推荐引用方式 GB/T 7714 | Huo ZL,Chen GX,Zhang Y,et al. Investigation of Cycling-Induced Dummy Cell Disturbance in 3D NAND Flash Memory[J]. IEEE ELECTRON DEVICE LETTERS,2018. |
APA | 霍宗亮,陈国星,张瑜,姜丹丹,靳磊,&邹兴奇.(2018).Investigation of Cycling-Induced Dummy Cell Disturbance in 3D NAND Flash Memory.IEEE ELECTRON DEVICE LETTERS. |
MLA | 霍宗亮,et al."Investigation of Cycling-Induced Dummy Cell Disturbance in 3D NAND Flash Memory".IEEE ELECTRON DEVICE LETTERS (2018). |
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