Impact of Continuing Scaling on the Device Performance of 3D Cylindrical Junction-less Charge Trapping Memory

	Impact of Continuing Scaling on the Device Performance of 3D Cylindrical Junction-less Charge Trapping Memory
	Ye TC(叶甜春); Li CL(李春龙); Tang ZY(唐兆云); Xu Q(徐强); Hong PZ(洪培真); Jiang DD(姜丹丹); Huo ZL(霍宗亮); Jin L(靳磊); Li XK(李新开)
刊名	Journal of Semiconductors
	2015-09-24
公开日期	2016-06-03
内容类型	期刊论文
源URL	[http://10.10.10.126/handle/311049/15204]
专题	微电子研究所_存储器研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Ye TC,Li CL,Tang ZY,et al. Impact of Continuing Scaling on the Device Performance of 3D Cylindrical Junction-less Charge Trapping Memory[J]. Journal of Semiconductors,2015.
APA	Ye TC.,Li CL.,Tang ZY.,Xu Q.,Hong PZ.,...&Li XK.(2015).Impact of Continuing Scaling on the Device Performance of 3D Cylindrical Junction-less Charge Trapping Memory.Journal of Semiconductors.
MLA	Ye TC,et al."Impact of Continuing Scaling on the Device Performance of 3D Cylindrical Junction-less Charge Trapping Memory".Journal of Semiconductors (2015).