一种新型的砷化镓平面肖特基变容管大信号模型

	一种新型的砷化镓平面肖特基变容管大信号模型
	董军荣
刊名	半导体学报
	2011-05-01
英文摘要	基于物理分析本文给出了一种GaAs平面肖特基变容管毫米波大信号模型。该模型包括结区非线性电阻、电容和外部寄生参数。通过分析正向和反向偏压下二极管特性，提出了一种简易、快捷的提参过程。为验证模型的准确性，制作了基于平面工艺平面肖特基变容管，并利用自动网络分析仪进行了S参数测试。在40GHz频率范围内，-10V到0.6V偏压下仿真得到的S参数与测试结果吻合良好。 A millimeter wave large-signal model of the GaAs planar schottky varactor diodes based on the physical analysis is presented. The model consists of nonlinear resistances and capacitances of the junction region and external parasitic parameters. By analyzing the characteristics of the diode under reverse and forward bias, an easy extraction procedure of all the parameters is addressed. To validate the newly proposed model, the PSVDs were fabricated based on planar process and were measured using automatic network analyzer. Measurement shows that the model exactly represents behavior of GaAs PSVDs under wide bias condition from -10V to 0.6V.
公开日期	2012-11-14
内容类型	期刊论文
源URL	[http://10.10.10.126/handle/311049/9115]
专题	微电子研究所_健康电子研发中心
推荐引用方式 GB/T 7714	董军荣. 一种新型的砷化镓平面肖特基变容管大信号模型[J]. 半导体学报,2011.
APA	董军荣.(2011).一种新型的砷化镓平面肖特基变容管大信号模型.半导体学报.
MLA	董军荣."一种新型的砷化镓平面肖特基变容管大信号模型".半导体学报 (2011).