Band-Edge Work Function Obtained by Plasma Doping TiN Metal Gate for nMOS Device Application

	Band-Edge Work Function Obtained by Plasma Doping TiN Metal Gate for nMOS Device Application
	Shan Tang; Tao GL(陶桂龙); Li JF(李俊峰); Zhu HL(朱慧珑); Wang XL(王晓磊); Xiang JJ(项金娟); Wang Y(王垚); Zhao C(赵超); Liu JB(刘金彪); Xu QX(徐秋霞)
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICE
	2018-04-24
文献子类	期刊论文
内容类型	期刊论文
源URL	[http://159.226.55.107/handle/172511/19203]
专题	微电子研究所_集成电路先导工艺研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Shan Tang,Tao GL,Li JF,et al. Band-Edge Work Function Obtained by Plasma Doping TiN Metal Gate for nMOS Device Application[J]. IEEE TRANSACTIONS ON ELECTRON DEVICE,2018.
APA	Shan Tang.,Tao GL.,Li JF.,Zhu HL.,Wang XL.,...&Xu GB.(2018).Band-Edge Work Function Obtained by Plasma Doping TiN Metal Gate for nMOS Device Application.IEEE TRANSACTIONS ON ELECTRON DEVICE.
MLA	Shan Tang,et al."Band-Edge Work Function Obtained by Plasma Doping TiN Metal Gate for nMOS Device Application".IEEE TRANSACTIONS ON ELECTRON DEVICE (2018).