Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches

	Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches
	Wang Kang; Yu Zhang; Xiaoyang Lin; Jean paul Adam; Guillaume Agnus; Wenlong Cai; Jean Rene Coudevylle; Nathalie Lsac; Jianlet Yang; Huaiwen yang
刊名	Advanced Electronic Materials
	2018-01-03
文献子类	期刊论文
语种	英语
内容类型	期刊论文
源URL	[http://159.226.55.107/handle/172511/19202]
专题	微电子研究所_集成电路先导工艺研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Wang Kang,Yu Zhang,Xiaoyang Lin,et al. Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches[J]. Advanced Electronic Materials,2018.
APA	Wang Kang.,Yu Zhang.,Xiaoyang Lin.,Jean paul Adam.,Guillaume Agnus.,...&Dafine Ravelosona.(2018).Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches.Advanced Electronic Materials.
MLA	Wang Kang,et al."Heterogeneous Memristive Devices Enabled by Magnetic Tunnel Junction Nanopillars Surrounded by Resistive Silicon Switches".Advanced Electronic Materials (2018).