Low-Temperature Performance of Nanoscale Perpendicular Magnetic Tunnel Junctions With Double MgO-Interface Free Layer | |
Wang LZ(王乐知); Hu YP(胡艳鹏)![]() ![]() | |
刊名 | IEEE Transactions on Magnetics
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2018-10-14 | |
文献子类 | 期刊论文 |
内容类型 | 期刊论文 |
源URL | [http://159.226.55.107/handle/172511/19201] ![]() |
专题 | 微电子研究所_集成电路先导工艺研发中心 |
作者单位 | 中国科学院微电子研究所 |
推荐引用方式 GB/T 7714 | Wang LZ,Hu YP,Jiang QF,et al. Low-Temperature Performance of Nanoscale Perpendicular Magnetic Tunnel Junctions With Double MgO-Interface Free Layer[J]. IEEE Transactions on Magnetics,2018. |
APA | Wang LZ.,Hu YP.,Jiang QF.,Cui HS.,Zhao C.,...&Wei JQ.(2018).Low-Temperature Performance of Nanoscale Perpendicular Magnetic Tunnel Junctions With Double MgO-Interface Free Layer.IEEE Transactions on Magnetics. |
MLA | Wang LZ,et al."Low-Temperature Performance of Nanoscale Perpendicular Magnetic Tunnel Junctions With Double MgO-Interface Free Layer".IEEE Transactions on Magnetics (2018). |
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