Improvement of Operation Characteristics for MONOS Charge Trapping Flash Memory with SiGe Buried Channel

	Improvement of Operation Characteristics for MONOS Charge Trapping Flash Memory with SiGe Buried Channel
	Yin HX(殷华湘); Wang GL(王桂磊); Hou CZ(侯朝昭); Yao JX(姚佳欣); Zhang QZ(张青竹)
刊名	Chinese Physics letters
	2018-04-30
文献子类	期刊论文
内容类型	期刊论文
源URL	[http://159.226.55.107/handle/172511/19193]
专题	微电子研究所_集成电路先导工艺研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Yin HX,Wang GL,Hou CZ,et al. Improvement of Operation Characteristics for MONOS Charge Trapping Flash Memory with SiGe Buried Channel[J]. Chinese Physics letters,2018.
APA	殷华湘,王桂磊,侯朝昭,姚佳欣,&张青竹.(2018).Improvement of Operation Characteristics for MONOS Charge Trapping Flash Memory with SiGe Buried Channel.Chinese Physics letters.
MLA	殷华湘,et al."Improvement of Operation Characteristics for MONOS Charge Trapping Flash Memory with SiGe Buried Channel".Chinese Physics letters (2018).