METHOD and arrangment for reducing contact resistance of two-dimensional cyrstal material

	METHOD and arrangment for reducing contact resistance of two-dimensional cyrstal material
	Jia KP(贾昆鹏); Su YJ(粟雅娟); Zhu HL(朱慧珑); Zhao C(赵超)
	2018-11-27
著作权人	中国科学院微电子研究所
专利号	US10141408
国家	美国
文献子类	发明专利
英文摘要	A method and an arrangement for reducing a contact resistance of a two-dimensional crystal material are provided. An example method may include forming a contact material layer on a two-dimensional crystal material layer; performing ion implantation; and performing thermal annealing.
公开日期	2014-12-31
申请日期	2014-03-18
内容类型	专利
源URL	[http://159.226.55.107/handle/172511/18904]
专题	微电子研究所_集成电路先导工艺研发中心
作者单位	中国科学院微电子研究所
推荐引用方式 GB/T 7714	Jia KP,Su YJ,Zhu HL,et al. METHOD and arrangment for reducing contact resistance of two-dimensional cyrstal material. US10141408. 2018-11-27.